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PNP Silicon RF Transistor
q
BF 660
For VHF oscillator applications
Type BF 660
Marking LEs
Ordering Code (tape and reel) Q62702-F982
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Emitter current Total power dissipation, TA 25 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA
Symbol VCE0 VCB0 VEB0 IC IE Ptot Tj Tstg
Values 30 40 4 25 30 280 150 - 65 ... + 150
Unit V
mA mW C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
07.94
BF 660
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 3 mA, VCE = 10 V AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz fT Ccb Cce - - - 700 0.6 0.28 - - - MHz pF V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 hFE 30 40 4 - 30 - - - - - - - - 50 - nA - V Values typ. max. Unit
Semiconductor Group
2
BF 660
Total power dissipation Ptot = f (TA)
Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz
Collector-base capacitance Ccb = f (VCB) f = 1 MHz
Semiconductor Group
3

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